CORPORATION
G M BTA1 4
Description
Features
NP N E PITAX I AL S ILI CO N T RANSI STOR
ISSUED DATE :2002/02/11
REVISED DATE :2006/05/09B
The GMBTA14 is designed for Darlington Amplifier Transistor.
*High D.C. Current Gain
*Collector-Emitter Voltage V
CES
=30V
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CES
V
EBO
I
C
P
D
Ratings
+150
-55 ~ +150
30
30
10
500
225
Unit
:
:
V
V
V
mA
mW
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CES
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(on)
*hFE1
*hFE2
fT
Cob
Min.
30
30
10
-
-
-
-
10k
20k
125
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
,unless otherwise noted)
Max.
Unit
Test Conditions
-
V
I
C
=100uA ,I
E
=0
-
V
I
C
=100uA ,V
BE
=0
-
V
I
E
=10uA ,I
C
=0
100
nA
V
CB
=30V, I
E
= 0
100
nA
V
EB
=10V, Ic = 0
1.5
V
I
C
=100mA, I
B
=0.1mA
2.0
V
V
CE
=5V, I
C
=100mA
-
V
CE
=5V, I
C
=10mA
-
V
CE
=5V, I
C
=100mA
-
MHz
V
CE
=5V, I
C
=10mA, f=100MHz
6
pF
V
CB
=10V, I
E
=0, f=1MHz
Pulse Test: Pulse Width 380us, Duty Cycle
¯
%
1/2
GTM [ GTM CORPORATION ]
