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GMBTA64 参数 Datasheet PDF下载

GMBTA64图片预览
型号: GMBTA64
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 226 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GMBTA64的Datasheet PDF文件第2页  
G M B TA 6 4
Description
Features
&
D.C. Current Gain
High
1/2
PNP SILICON TRANSISTOR
The GMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA.
&For Complementary with NPN Type GMBTA14
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
Ratings
+150
-55 ~ +150
-30
-30
-10
-500
225
V
V
V
mA
mW
Unit
Characteristics
Symbol
at Ta = 25 :
Min.
Typ.
Max.
Unit
Test Conditions
BV
CBO
BV
CES
BV
EBO
I
CBO
I
EBO
V
CE
(sat)
V
BE
(on)
HFE1
HFE2
fT
-30
-30
-10
-
-
-
-
10K
20K
125
-
-
-
-
-
-
-
-
-
-
-
-
-100
-100
-1.5
-2
-
-
V
V
V
nA
nA
V
V
I
C
=-100uA , I
E
=0
I
C
=-100uA, I
B
=0
I
E
=-10uA, I
C
=0
V
CB
=-30V, I
E
=0
V
CE
=-10V
I
C
=-100mA, I
B
=-0.1mA
V
CE
=-5V, I
C
=-100mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-100mA
MHz
V
CE
=-5V, I
C
=-100mA, f=100MHz
*Pulse
Test :Pulse width 380us,Duty Cycly 2%