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GMPCR06 参数 Datasheet PDF下载

GMPCR06图片预览
型号: GMPCR06
PDF下载: 下载PDF文件 查看货源
内容描述: 敏感门可控硅整流器反向阻断闸流体0.8A , 400V [SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 0.8A, 400V]
分类和应用: 可控硅整流器
文件页数/大小: 3 页 / 217 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GMPCR06的Datasheet PDF文件第2页浏览型号GMPCR06的Datasheet PDF文件第3页  
ISSUED DATE :2005/12/21
REVISED DATE :2006/03/29B
GMPCR06
Description
S E N S I T I V E G AT E S I L I C O N C O N T R O L L E D R E C T I F I E R S
REVERSE BLOCKING THYRISTORS 0.8A, 400V
The GMPCR06 PNPN device is designed for high volume, line-powered applications such as relay and lamp
drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.
Features
&
Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits
&
On-state
Current Rating of 0.8A RMS at 80 :
&
High Surge Current Capability 10A
&
Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design
&
Immunity to dV/dt - 20 V/ sec Minimum at 110 :
&
Glass-Passivated Surface for Reliability and Uniformity
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings
(T
J
=25 : unless otherwise noted)
Rating
Peak Repetitive Off-State Voltage(Note1)
(T
J
=-40 to 110 : , Sine Wave, 50 to 60Hz; Gate open)
On-state RMS Current, (T
C
=80 : ) 180 HConduction Angles
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60Hz, T
J
=25 : )
Circuit Fusing Consideration (t=8.3ms)
Forward Peak Gate Power (T
A
=25 : , Pulse Width
Forward Average Gate Power (T
A
=25 : , t=8.3ms)
Forward Peak Gate Current (T
A
=25 : , Pulse Width
Reverse Peak Gate Voltage (T
A
=25 : , Pulse Width
Storage Temperature Rage
1.0 s)
1.0 s)
1.0 s)
Symbol
V
DRM
V
RRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GRM
T
J
T
stg
Value
400
0.8
10
0.415
100
10
1.0
5.0
-40 ~ +110
-40 ~ +150
Unit
V
A
A
A
2
S
mW
mW
A
V
:
:
Operating Junction Temperature Rang @ Rate V
RRM
and V
DRM
however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall
not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress
limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device function operation is
not implied, damage may occur and reliability may be affected.
Note 1.
V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage:
GMPCR06
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