CORPORATION
G M P S A1 3
Description
Features
NPN SILICO N DARLING TON TRANSISTO R
ISSUED DATE :2004/08/19
REVISED DATE :2004/11/29B
The GMPSA13 is designed for darlington applications requiring extremely high current gain at collector to 500mA.
*High D.C. Current Gain
*Complementary to GMPSA63
Package Dimensions
D
E
S1
TO-92
A
b1
S E A T IN G
PLANE
REF.
L
e1
e
b
C
A
S
1
b
b
1
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CES
V
EBO
I
C
P
D
Ratings
+150
-55 ~ +150
30
30
10
500
625
V
V
V
mA
mW
Unit
Characteristics
Symbol
BV
CBO
BV
CES
BV
EBO
I
CBO
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
at Ta = 25 :
Min.
30
30
10
-
-
-
-
5
10
-
125
-
Typ.
-
-
-
-
-
-
1.0
-
-
50
-
-
Max.
-
-
-
100
100
1.5
-
-
-
-
-
6
Unit
V
V
V
nA
nA
V
V
K
K
K
MHz
pF
Test Conditions
I
C
=100uA ,I
E
=0
I
C
=100uA ,V
BE
=0
I
E
=10uA ,I
C
=0
V
CB
=30V, I
E
= 0
V
EB
=10V, Ic = 0
I
C
=100mA, I
B
=0.1mA
I
C
=500mA, I
B
=0.5mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
= 0,f=1MHz
Pulse Test: Pulse Width 380us, Duty Cycle
¯
%
1/3
GTM [ GTM CORPORATION ]
