ISSUED DATE :2003/11/27
REVISED DATE :2004/11/29B
G M P S A4 2
Description
Features
N P N E P I TA X I A L P L A N A R T R A N S I S T O R
The GMPSA42 is designed for application that requires high voltage.
*High Collect-Emitter Breakdown Voltage
*Low Collect-Emitter Saturation Voltage
*Complementary to GMPSA92
Package Dimensions
D
E
S1
TO-92
A
b1
S E A T IN G
PLANE
REF.
L
e1
e
b
C
A
S
1
b
b
1
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings
(Ta = 25 :
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
,unless otherwise specified)
Ratings
Unit
V
CBO
V
CEO
V
EBO
I
C
Tj
Ts
TG
P
D
300
300
6
500
+150
-55 ~ +150
625
V
V
V
mA
mW
Electrical Characteristics
(Ta = 25 : ,unless otherwise specified)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
hFE3
fT
Cob
Min.
300
300
6
-
-
-
-
25
40
40
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
350
900
-
-
-
-
3
MHz
pF
Unit
V
V
V
nA
nA
mV
mV
IC=100uA
IC=1mA
IE=10uA
VCB=260V
VEB=6V
IC=20mA, IB=2mA
IC=20mA, IB=2mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCB=20V, IC=10mA, f=100MHz
VCB=20V, f=1MHz,IE=0
Test Conditions
Classification of Rank
Rank
NS
N
hFE1
>80
>25
hFE2
>120
>40
hFE3
>120
>40
VCE(sat)
<200mV
<350mV
GMPSA42
1/2
GTM [ GTM CORPORATION ]
