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GP2030S 参数 Datasheet PDF下载

GP2030S图片预览
型号: GP2030S
PDF下载: 下载PDF文件 查看货源
内容描述: N和P沟道增强型功率MOSFET [N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 7 页 / 523 K
品牌: GTM [ GTM CORPORATION ]
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Pb Free Plating Product
ISSUED DATE :2005/08/10
REVISED DATE :
GP2030S
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
The GP2030S provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching
Description
N-CH BV
DSS
20V
N-CH
R
DS(ON)
60m
N-CH
I
D
2.6A
P-CH BV
DSS
-20V
N-CH
R
DS(ON)
80m
N-CH
I
D
-2.3A
Features
Package Dimensions
D
GAUGE PLANE
E
REF.
A
A1
A2
b
b1
b2
b3
c
A
Millimeter
Min.
Max.
-
0.381
2.921
0.356
0.356
1.143
0.762
0.203
0.5334
-
4.953
0.559
0.508
1.778
1.143
0.356
REF.
c1
D
E
E1
e
HE
L
Millimeter
Min.
Max.
0.203
0.279
9.017
10.16
6.096
7.112
7.620
8.255
2.540 BSC
-
10.92
2.921
3.810
SEATING PLANE
Z
Z
b
L
SECTION Z - Z
b
e
DIP-8
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
c
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Ratings
N-channel P-channel
Unit
V
V
A
A
A
W
W/
20
f 12
2.6
2.1
15
2.0
0.016
-20
f 12
-2.3
-1.8
-10
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Rthj-a
Value
62.5
Unit
/W
GP2030S
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