Pb Free Plating Product
ISSUED DATE :2006/05/12
REVISED DATE :
GP4565
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
The GP4565 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Performance
Description
N-CH BV
DSS
40V
N-CH
R
DS(ON)
25m
N-CH
I
D
7.6A
P-CH BV
DSS
-40V
N-CH
R
DS(ON)
33m
N-CH
I
D
-6.5A
Features
Package Dimensions
D
GAUGE PLANE
E
REF.
A
A1
A2
b
b1
b2
b3
c
A
Millimeter
Min.
Max.
-
0.381
2.921
0.356
0.356
1.143
0.762
0.203
0.5334
-
4.953
0.559
0.508
1.778
1.143
0.356
REF.
c1
D
E
E1
e
HE
L
Millimeter
Min.
Max.
0.203
0.279
9.017
10.16
6.096
7.112
7.620
8.255
2.540 BSC
-
10.92
2.921
3.810
SEATING PLANE
Z
Z
b
L
SECTION Z - Z
b
e
DIP-8
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
c
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Ratings
N-channel P-channel
Unit
V
V
A
A
A
W
W/ :
:
40
±20
7.6
6
30
2.0
0.016
-40
±20
-6.5
-5.2
-30
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Symbol
Rthj-a
Value
62.5
Unit
: /W
GP4565
Page: 1/7
GTM [ GTM CORPORATION ]
