Pb Free Plating Product
ISSUED DATE :2005/08/04
REVISED DATE :
GP9973
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
60V
80m
3.9A
The GP9973 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
*Simple Drive Requirement
*Low Gate Charge
Description
Features
Package Dimensions
D
GAUGE PLANE
E
REF.
A
A1
A2
b
b1
b2
b3
c
A
Millimeter
Min.
Max.
-
0.381
2.921
0.356
0.356
1.143
0.762
0.203
0.5334
-
4.953
0.559
0.508
1.778
1.143
0.356
REF.
c1
D
E
E1
e
HE
L
Millimeter
Min.
Max.
0.203
0.279
9.017
10.16
6.096
7.112
7.620
8.255
2.540 BSC
-
10.92
2.921
3.810
SEATING PLANE
Z
Z
b
L
SECTION Z - Z
b
e
DIP-8
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@10V
Continuous Drain Current
3
, V
GS
@10V
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
c
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Ratings
60
f 20
3.9
2.5
20
2
0.016
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Symbol
Rthj-amb
Value
62.5
Unit
/W
GP9973
Page: 1/4
GTM [ GTM CORPORATION ]
