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GPN2222A 参数 Datasheet PDF下载

GPN2222A图片预览
型号: GPN2222A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 138 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GPN2222A的Datasheet PDF文件第2页浏览型号GPN2222A的Datasheet PDF文件第3页  
ISSUED DATE :2004/07/09
REVISED DATE :2004/11/29B
GPN2222A
Description
Features
NP N EP ITAX I AL PL ANAR TANSI STOR
The GPN2222A is designed for general purpose amplifier and high speed, medium-power switching applications.
*Low Collector Saturation Voltage
*High Speed Switching
*For Complementary Use with PNP Type GPN2907A
Package Dimensions
D
E
S1
TO-92
A
S E A T IN G
PLANE
b1
REF.
L
e1
e
b
C
A
S
1
b
b
1
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
Ratings
+150
-55 ~ +150
75
40
6
600
625
Max.
-
-
-
10
10
50
0.3
1.0
1.2
2
-
-
-
300
-
-
-
8
Unit
V
V
V
nA
nA
nA
V
V
V
V
Test Conditions
I
C
=10uA ,I
E
=0
I
C
=10mA ,I
B
=0
I
E
=10uA ,I
C
=0
V
CE
=60V, I
E
= 0
V
CE
=60V,V
BE(OFF)
=3V
V
EB
=3V, Ic = 0
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
V
CE
=10V, I
C
=100uA
V
CE
=10V, I
C
=1mA
V
CE
=10V,I
C
=10mA
V
CE
=10V,I
C
=150mA
V
CE
=10V,I
C
=500mA
V
CE
=1V,I
C
=150mA
V
CE
=20V, I
C
=20mA, f=100MHz
V
CB
=10V, I
E
= 0,f=1MHz
*
Pulse Test: Pulse Width 380us, Duty Cycle
2%
Unit
V
V
V
mA
mW
Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEX
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)1
* V
BE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
*hFE6
fT
Cob
at Ta = 25 :
Min.
75
40
6
-
-
-
-
-
-
-
35
50
75
100
40
50
300
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MHz
pF
1/3