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GS2N7002 参数 Datasheet PDF下载

GS2N7002图片预览
型号: GS2N7002
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 3 页 / 203 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GS2N7002的Datasheet PDF文件第2页浏览型号GS2N7002的Datasheet PDF文件第3页  
Pb Free Plating Product
ISSUED DATE :2004/09/15
REVISED DATE :2006/01/17B
GS2N7002
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
60V
4.5
500mA
Description
The GS2N7002 is universally used for all commercial-industrial surface mount applications.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.8
1.10
0
0.10
0.8
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Operating Junction and Storage Temperature Range
Drain-Source Voltage
Gate-Source Voltage
-
Continuous
-
Non-repetitive (tp
Pulsed Drain Current
Power Dissipation
Thermal Resistance ,Junction-to-Ambient
(2)
Symbol
Tj, Tstg
Ratings
-55 ~ +150
60
±20
±40
500
800
225
556
Unit
:
V
V
V
mA
mA
mW
: /W
V
DS
V
GS
50us)
(1)
V
GSM
I
D
I
DM
P
D
R
thJA
Continuous Drain Current
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Static Drain-Source on-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(2)Pulse Width
300us, Duty cycle
2%.
Symbol
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
G
FS
Ciss
Coss
Crss
Min.
60
1
-
-
500
-
-
80
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
2.5
±100
1
-
5
4.5
-
50
25
5
mS
pF
pF
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Unit
V
V
nA
uA
mA
Test Conditions
V
GS
=0, I
D
=250uA
V
DS
=2.5V, I
D
=0.25mA
V
GS
=±20V, V
DS
=0
V
DS
=60V, V
GS
=0
V
DS
=7.5V, V
GS
=10V
I
D
=50mA, V
GS
=5V
I
D
=500mA, V
GS
=10V
V
DS
>2 V
DS(ON)
, I
D
=200mA
(1)The Power Dissipation of the package may result in a continuous train current.
GS2N7002
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