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GS401SD 参数 Datasheet PDF下载

GS401SD图片预览
型号: GS401SD
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装肖特基二极管 [SURFACE MOUNT SCHOTTKY BARRIER DIODE]
分类和应用: 肖特基二极管
文件页数/大小: 2 页 / 163 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GS401SD的Datasheet PDF文件第2页  
CORPORATION
GS401SD
Description
Package Dimensions
ISSUED DATE :2005/12/20
REVISED DATE :2006/05/24B
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT A G E 3 0 V, C U R R E N T 0 . 2 A
The GS401SD is high frequency rectification for switching power supply.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at T
A
= 25 :
Parameter
Junction Temperature
Storage Temperature
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Maximum Average Forward Rectified Current
Total Power Dissipation
Symbol
Tj
Tstg
V
RRM
V
RMS
V
DC
I
FSM
C
J
Io
PD
Ratings
+125
-55 ~ +125
30
21
30
3.0
40
0.2
225
Unit
:
:
V
V
V
A
pF
A
mW
Electrical Characteristics
(at T
A
= 25 : unless otherwise noted)
Parameter
Reverse Breakdown Voltage
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
Symbol
V
(BR)R
V
F
I
R
Min.
30
-
-
-
Typ.
-
-
-
-
Max.
-
500
50
100
Unit
V
mV
A
A
Test Conditions
IR=100 A
IF=200mA
VR1=10V
VR2=30V
Notes: 1. Measured at 1.0 MHz and 0 reverse bias voltage.
2. ESD sensitive product handling required.
GS401SD
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