CORPORATION
GS421SD
Description
Package Dimensions
ISSUED DATE :2005/12/20
REVISED DATE :
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT A G E 4 0 V, C U R R E N T 0 . 1 A
The GS421SD is designed for low power rectification.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at T
A
= 25 :
Parameter
Junction Temperature
Storage Temperature
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Maximum Average Forward Rectified Current
Total Power Dissipation
Symbol
Tj
Tstg
V
RRM
V
RMS
V
DC
I
FSM
C
J
Io
PD
Ratings
+125
-40 ~ +125
40
28
40
1.0
6.0
0.1
225
Unit
:
:
V
V
V
A
pF
A
mW
Electrical Characteristics
(at T
A
= 25 : unless otherwise noted)
Parameter
Reverse Breakdown Voltage
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
Symbol
V
(BR)R
V
F
I
R
Min.
40
-
-
-
Typ.
-
-
-
-
Max.
-
340
550
30
Unit
V
mV
uA
Test Conditions
IR=100 A
IF1=10mA
IF2=100mA
VR=10V
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 10 volts.
2. ESD sensitive product handling required.
GS421SD
Page: 1/2
GTM [ GTM CORPORATION ]
