Pb Free Plating Product
ISSUED DATE :2006/08/15
REVISED DATE :
GS7407
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-20V
135m
-1.2A
The GS7407 uses advanced trench technology to provide excellent on-resistance extremely efficient and
cost-effectiveness device. This device is suitable for use as a load switch or in PWM application.
The GS7407 is universally used for all commercial-industrial applications.
Description
* Lower Gate Charge
*Small Package Outline
*RoHS Compliant
Features
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Ratings
-20
±8
-1.2
-1.0
-10
0.35
0.0028
-55 ~ +150
Value
360
Unit
V
V
A
A
A
W
W/ :
:
Unit
:
/W
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
GS7407
Page: 1/4
GTM [ GTM CORPORATION ]
