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GSA684 参数 Datasheet PDF下载

GSA684图片预览
型号: GSA684
PDF下载: 下载PDF文件 查看货源
内容描述: PNP外延平面晶体管 [PNP EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 1 页 / 144 K
品牌: GTM [ GTM CORPORATION ]
   
G S A684
Description
Features
!
!
ISSUED DATE :2003/10/24
REVISED DATE :2004/11/29B
P N P E P I TA X I A L P L A N A R T R A N S I S T O R
T
he GSA684 is designed for power amplifier and driver.
*
Low collector to emitter saturation voltage V
CE
(sat).
*Complementary pair with GSC1384
D
Package Dimensions
E
S1
TO-92
A
b1
S E A T IN G
PLANE
REF.
L
e1
e
b
C
A
S
1
b
b
1
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings
(Ta = 25 :
Parameter
,unless otherwise specified)
Ratings
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Collect Current*(Pulse)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
V
CE(sat)
V
BE(sat)
*h
FE1
*h
FE2
fT
Cob
Min.
-60
-50
-5
-
-
-
85
50
-
-
Typ.
-
-
-
-
-200
-0.85
160
100
200
11
V
CBO
V
CEO
V
EBO
I
C
I
CP
Tj
Ts
TG
P
D
Max.
-
-
-
-0.1
-400
-1.2
340
-
-
20
Unit
V
V
V
uA
mV
V
-60
-50
-5
-1
-1.5
+150
-55 ~ +150
1
Test Conditions
I
C
=-10uA,I
E
=0
I
C
=-2mA,I
B
=0
I
E
=-10uA,I
C
=0
V
CB
=-20V,I
E
=0
l
C
=-0.5A,I
B
=-50mA(note)
I
C
=-0.5A, I
B
=-50mA(note)
V
CE
=-10V,I
C
=-500mA(note)
V
CE
=-5V,I
C
=-1A(note)
V
CE
=-10V,I
B
=-50mA,f=200MHz
V
CB
=-10V,I
E
=0,f=1MHz
V
V
V
A
A
W
ELECTRICAL Characteristics
(Ta = 25 :
,unless otherwise specified)
MHz
pF
Note: Pulse measurement
Classification Of h
FE
1
Rank
Range
Q
85-170
R
120-240
S
170-340
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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