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GSB772S 参数 Datasheet PDF下载

GSB772S图片预览
型号: GSB772S
PDF下载: 下载PDF文件 查看货源
内容描述: PNP外延平面晶体管 [PNP EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 127 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GSB772S的Datasheet PDF文件第2页  
CORPORATION
GSB772S
Description
Package Dimensions
D
E
S1
ISSUED DATE :2004/09/13
REVISED DATE :2004/11/29B
P N P E P I TA X I A L P L A N A R T R A N S I S TO R
The
GSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver.
TO-92
A
S E A T IN G
PLANE
b1
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25 :
Collector to Emitter Voltage at Ta=25 :
Emitter to Base Voltage at Ta=25 :
Collector Current at Ta=25 :
Total Power Dissipation at Ta=25 :
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
-40
-30
-5.0
-3.0
750
V
V
V
A
mW
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
at Ta = 25 :
Min.
-40
-30
-5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
160
80
55
Max.
-
-
-
-1
-1
-0.5
-2
-
500
-
-
MHz
Pf
Unit
V
V
V
uA
uA
V
V
IC=-100uA
IC=-10mA
IE=-10uA
VCB=-30V
VEB=-3V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
VCE=-20V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
Test Conditions
Classification Of h
FE
2
Rank
Range
Q
100-200
P
160-320
E
250-500
1/2