ISSUED DATE :2005/01/05
REVISED DATE :
G S B AT 5 4 / A / C / S
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT A G E 3 0 V, C U R R E N T 2 0 0 m A
Description
These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BCS.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Peak Repetitive Reverse Voltage
Forward Continuous Current
Peak Repetitive Forward Current
Surge Forward Current(t
1.0s)
Total Power Dissipation at Ta = 25 :
Symbol
Tj
Tstg
V
R
I
F
I
FRM
I
FSM
PD
Ratings
-55 ~ +125
-55 ~ +150
30
200
300
600
225
V
mA
mA
mA
mW
Unit
Characteristics at Ta = 25 :
characteristics
Reverse Breakdown Voltage
Symbol
V
(BR)R
V
F(1)
V
F(2)
Forward Voltage
V
F(3)
V
F(4)
V
F(5)
Reverse Leakage Current
Total Capacitance
Reverse Recover Time
I
R
C
T
Trr
Min
30
-
-
-
-
-
-
-
-
Max.
-
240
320
400
500
1000
2.0
10
5
Unit
V
mV
mV
mV
mV
mV
A
pF
ns
IR=10 A
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25V
VR=1V, f=1MHz
IF=IR=10mA, IR(Rec)=1mA
Test Conditions
1/2
GTM [ GTM CORPORATION ]
