CORPORATION
G S B AW 5 6
Description
ISSUED DATE :2005/12/23
REVISED DATE :
S U R F A C E M O U N T, S W I T C H I N G D I O D E
The GSBAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar
technology, and encapsulated in a small SOT-323 plastic SMD package.
Package Dimensions
3
1
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
2
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at T
A
= 25 :
Parameter
Junction Temperature
Storage Temperature
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current (1ms)
Total Power Dissipation
Notes: 1. Device mounted on an FR4 printed-circuit board.
single diode loaded (note1)
double diode loaded (note1)
Symbol
Tj
Tstg
V
RRM
V
R
I
F
I
FRM
I
FSM
P
D
Ratings
+125
-65 ~ +150
85
75
150
130
500
1
250
Unit
:
:
V
V
mA
mA
A
mW
Electrical Characteristics
(at T
A
= 25 : unless otherwise noted)
Parameter
Reverse Voltage
Symbol
V
R
V
F
(1)
Forward Voltage
V
F
(2)
V
F
(3)
V
F
(4)
Reverse Current
Diode Capacitance
Reverse Recovery Time
I
R
C
D
Trr
-
Min.
85
-
-
-
-
-
Max.
-
715
855
1000
1250
1
2
4
Unit
V
mV
mV
mV
mV
uA
pF
nS
I
R
=100uA
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=80V
V
R
=0, f=1MHz
I
F
=I
R
=10mA, R
L
=100
measured at I
R
=1mA
Test Conditions
GSBAW56
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GTM [ GTM CORPORATION ]
