ISSUED DATE :2005/06/08
REVISED DATE :
GSBC807
Description
Package Dimensions
PNP EPITAXIAL PLANAR TRANSISTOR
The GSBC807 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
-50
-45
-5
800
225
V
V
V
mA
mW
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVCES
BVEBO
ICES
IEBO
*VCE(sat)
*VBE(on)
*h
FE
fT
Cob
at Ta = 25 :
Min.
-50
-45
-50
-5
-
-
-
-
100
-
-
Typ.
-
-
-
-
-
-
-
-
-
100
-
Max.
-
-
-
-
-100
-100
-700
-1.2
630
-
12
MHz
pF
Unit
V
V
V
V
nA
nA
mV
V
IC=-100uA
IC=-10mA
IC=-100uA
IE=-100uA
VCE=-25V
VEB=-4V
IC=-500mA, IB=-50mA
VCE=-1V, IC=-300mA
VCE=-1V, IC=-100mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz, IE=0A
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Test Conditions
Classification Of h
FE
Rank
Range
9FA
100 - 250
9FB
160 - 400
9FC
250 - 630
1/2