欢迎访问ic37.com |
会员登录 免费注册
发布采购

GSC1384 参数 Datasheet PDF下载

GSC1384图片预览
型号: GSC1384
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 401 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GSC1384的Datasheet PDF文件第2页浏览型号GSC1384的Datasheet PDF文件第3页  
GSC1384
Description
Features
!
!
ISSUED DATE :2003/10/24
REVISED DATE :2004/11/29B
N P N E P I TA X I A L P L A N A R T R A N S I S T O R
T
he GSC1384 is designed for power amplifier and driver.
*
Low collector to emitter saturation voltage V
CE
(sat).
*Complementary pair with GSA684
Package Dimensions
D
E
S1
TO-92
A
b1
S E A T IN G
PLANE
REF.
L
e1
e
b
C
A
S
1
b
b
1
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings
(Ta = 25 :
Parameter
,unless otherwise specified)
Ratings
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Collect Current*(Pulse)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
V
CBO
V
CEO
V
EBO
I
C
I
CP
Tj
Ts
TG
P
D
60
50
5
1
1.5
+150
-55 ~ +150
1
V
V
V
A
A
W
Electrical Characteristics
(Ta = 25 :
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
V
CE(sat)
V
BE(sat)
*h
FE1
*h
FE2
fT
Cob
Min.
60
50
5
-
-
-
85
50
-
-
Typ.
-
-
-
-
200
0.85
160
100
200
11
,unless otherwise specified)
Max.
-
-
-
0.1
400
1.2
340
-
-
20
Unit
V
V
V
uA
mV
V
Test Conditions
I
C
=10uA,I
E
=0
I
C
=2mA,I
B
=0
I
E
=10uA,I
C
=0
V
CB
=20V,I
E
=0
l
C
=0.5A,I
B
=50mA(note)
I
C
=0.5A, I
B
=50mA(note)
V
CE
=10V,I
C
=500mA(note)
V
CE
=5V,I
C
=1A(note)
V
CE
=10V,I
B
=-50mA,f=200MHz
V
CB
=10V,I
E
=0,f=1MHz
MHz
pF
Note: Pulse measurement
Classification Of h
FE
1
Rank
Range
Q
85-170
R
120-240
S
170-340
1/3