ISSUED DATE :2005/02/18
REVISED DATE :
GSC4081
Description
Features
&
Cob. Cob=2.0 pF (Typ.)
Low
NPN EPITAXIAL PLANAR TRANSISTOR
The GSC4081 is designed for use in driver stage of AF amplifier and general purpose amplification.
& Complements the GSA1576A
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55~+150
60
50
7
150
225
V
V
V
mA
mW
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
h
FE
fT
Cob
at Ta = 25 :
Min.
60
50
7
-
-
-
120
-
-
Typ.
-
-
-
-
-
-
-
180
2
Max.
-
-
-
100
100
400
560
-
3.5
MHz
pF
Unit
V
V
V
nA
nA
mV
IC=50uA
IC=1mA
IE=50uA
VCB=60V
VEB=7V
IC=50mA, IB=5mA
VCE=6V, IC=1mA
VCE=12V, IC=2mA, f=100MHz
VCB=12V, f=1MHz,IE=0
* Pulse Test: Pulse Width 380us, Duty Cycle
2%
Test Conditions
Classification Of h
FE
Rank
Range
5BQ
120 - 270
5BR
180 - 390
5BS
270 - 560
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