ISSUED DATE :2005/07/15
REVISED DATE :
GSC4762
Description
NPN EPITAXIAL SILICON TRANSISTOR
The GSC4672 is designed for low frequency amplifier applications.
Features
&
saturation voltage, typically V
CE
(sat) =0.1V at I
C
/I
B
=1A/50mA
Low
&
Excellent
DC current gain characteristics
Package Dimensions
D
E
S1
TO-92
A
S E A T IN G
PLANE
b1
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Absolute Maximum Ratings
(T
A
=25 : )
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse PW=10ms)
Total Device Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
T
J
T
stg
Ratings
60
50
6
2
5
750
150
-55 ~ +150
Unit
V
V
V
A
A
mW
:
:
Electrical Characteristics
(T
A
= 25 : unless otherwise noted)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
fT
Cob
Min.
60
50
6
-
-
-
120
-
-
Typ.
-
-
-
-
-
0.1
-
210
25
Max.
-
-
-
100
100
0.35
400
-
-
MHz
pF
Unit
V
V
V
nA
nA
V
I
C
=50uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50uA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=1A, I
B
=50mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
E
=500mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
*Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Test Conditions
Classification Of h
FE
Rank
Range
A
120 ~ 240
B
200 ~ 400
1/2
GTM [ GTM CORPORATION ]
