ISSUED DATE :2006/11/02
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
-30
-
-
V
BVDSS
VGS(th)
gfs
VGS=0, ID=-10mA
-0.8
-
-2.0
V
V
DS=10, ID=-1mA
DS=-10V, ID=-6.5A
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
31
-
-
S
V
±10
uA
uA
IGSS
VGS= ±16V
-
-10
IDSS
VDS=-30V, VGS=0
-
7
15
-
VGS=-10V, ID=-6.5A
Static Drain-Source On-Resistance2
mꢀ
RDS(ON)
-
VGS=-4.5V, ID=-6.5A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
130
10
30
22
11
Qg
Qgs
Qgd
Td(on)
Tr
ID=-13A
nC
-
VDS=-24V
VGS=-10V
-
-
VDS=-15V
ID=-6.5A
VGS=-10V
RG=4.7ꢀ
RL=2.3ꢀ
-
ns
Turn-off Delay Time
Fall Time
395
110
5880
1000
1050
-
Td(off)
Tf
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
Ciss
Coss
Crss
VGS=0V
pF
-
VDS=-10V
f=1.0MHz
-
Source-Drain Diode
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
-
-
-1.2
V
VSD
IS=-13A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125к/W when mounted on Min. copper pad.
GSC8107E
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