ISSUED DATE :2005/06/14
REVISED DATE :
GSC945
Description
NPN EPITAXIAL SILICON TRANSISTOR
The GSC945 is an audio frequency amplifier high frequency OSC NPN transistor.
Features
&
Collector-Emitter Voltage BV
CBO
=50V
current up to 150mA
&
High h
FE
linearity
&
Collector
Package Dimensions
D
E
S1
TO-92
A
b1
S E A T IN G
PLANE
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Absolute Maximum Ratings
(T
A
=25 : )
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Device Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
IB
P
D
T
J
T
stg
Ratings
60
50
5
150
50
250
125
-55 ~ +150
Unit
V
V
V
mA
mA
mW
:
:
Electrical Characteristics
(T
A
= 25 : unless otherwise noted)
Symbol
BV
CBO
BV
CEO
BV
EBO
ICBO
IEBO
V
CE
(sat)
h
FE
fT
Cob
NF
Min.
60
50
5
-
-
-
90
100
-
-
Typ.
-
-
-
-
-
0.1
-
190
2.0
4.0
Max.
-
-
-
100
100
0.3
600
-
3.0
6.0
MHz
pF
dB
Unit
V
V
V
nA
nA
V
I
C
=100uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=1uA, I
C
=0
VCB=40V
VEB=3V
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=1mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
I
C
=0.1mA , V
CE
=6V, R
G
=10k Ł , f=100HZ
Test Conditions
Classification Of h
FE
Rank
Range
R
90 ~ 180
Q
135 ~ 270
P
200 ~ 400
K
300 ~ 600
1/2
GTM [ GTM CORPORATION ]
