CORPORATION
GSD965A
Description
Package Dimensions
D
E
S1
ISSUED DATE :2005/02/04
REVISED DATE :
NP N E PITAX I AL P L ANAR T RANS ISTO R
The GSD965A is designed for use as AF output amplifier and flash unit.
TO-92
A
b1
S E A T IN G
PLANE
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (Continuous)
Collector Current (Peak PT=10mS)
Junction Temperature
Storage Temperature
Total Power Dissipation at Ta = 25 :
BVCBO
BVCEO
BVEBO
IC
IC
Tj
Tstg
PD
40
30
7.0
5
8
+150
-55 ~ +150
0.75
W
V
V
V
A
A
Characteristics at Ta = 25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
30
7
-
-
-
230
150
-
-
Typ.
-
-
-
-
-
0.35
-
-
150
-
Max.
-
-
-
0.1
0.1
1
800
-
-
50
MHz
pF
Unit
V
V
V
uA
uA
V
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=7V
IC=3A, IB=0.1A
VCE=2V, IC=0.5A
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz
*
Pulse Test: Pulse Width 380us, Duty Cycle
2%
Test Conditions
Classification Of hFE1
Rank
Range
Q
230-380
R
340-600
S
560-800
1/2
GTM [ GTM CORPORATION ]
