CORPORATION
GSD965
Description
NPN EPITAXIAL PLANAR T RANSISTOR
ISSUED DATE :2004/04/05
REVISED DATE :2004/11/29B
T
he GSD965 is designed for use as AF output amplifier and flash unit
Package Dimensions
D
E
S1
TO-92
A
b1
SE A TING
P LA NE
L
REF.
A
S
1
b
e1
e
b
C
Millimeter
Min.
4.45
1.02
0.36
0.36
0.36
Max.
4.7
-
0.51
0.76
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
4.44
3.30
12.70
1.150
2.42
Max.
4.7
3.81
-
1.390
2.66
b
1
C
Absolute Maximum Ratings at Ta = 25
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (Continuous)
Collector Current (Peak PT=10mS)
Junction Temperature
Storage Temperature
Total Power Dissipation at Ta = 25 :
BVCBO
BVCEO
BVEBO
IC
IC
Tj
Tstg
PD
40
20
7.0
5
8
+150
-55 ~ +150
0.75
W
V
V
V
A
A
Characteristics at Ta = 25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
20
7
-
-
-
230
150
-
-
Typ.
-
-
-
-
-
0.35
-
-
150
-
Max.
-
-
-
0.1
0.1
1
800
-
-
50
MHz
pF
Unit
V
V
V
uA
uA
V
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=7V
IC=3A, IB=0.1A
VCE=2V, IC=0.5A
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz
*
Pulse Test: Pulse Width 380us, Duty Cycle
2%
Test Conditions
Classification Of hFE1
Rank
Q
Range
230-380
R
340-600
S
560-800
1/2
GTM [ GTM CORPORATION ]
