ISSUED DATE :2005/12/23
REVISED DATE :
GSM BD2004
S U R F A C E M O U N T, S W I T C H I N G D I O D E
V O LT A G E 3 0 0 V, C U R R E N T 0 . 2 2 5 A
Description
The GSMBD2004 is designed for ultra high speed switching.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings
(At T
A
= 25 : unless otherwise specified)
Parameter
Repetitive Peak Reverse Voltage
Continuous reverse voltage
RMS Reverse Voltage
Forward Continuous Current
Non-Repetitive Peak Forward surge Current @Tp =1.0us
@Tp=1.0s
Typical Junction Capacitance between Terminal (Note1)
Max. Reverse Recovery Time (Note2)
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operation and Storage Temperature Range
Symbol
V
RRM
V
R
(V
RWM
)
V
R
(
RMS
)
I
FM
I
FSM
C
J
T
RR
PD
R
JA
Ratings
300
240
170
225
4
1
5.0
50
350
357
-65 ~ +150
Unit
V
V
V
mA
A
pF
nSec
mW
: /W
:
T
J
, T
STG
Electrical Characteristics
(At T
A
= 25 : unless otherwise noted)
Characteristics
Reverse Breakdown Voltage
Forward Voltage
Symbol
BV
R
V
F
Min.
300
-
-
Reverse Current
I
R
-
Max.
-
0.85
1
1.25
100
100
Unit
V
V
V
V
nA
uA
I
R
=100uA
I
F
=20mA
I
F
=100mA
I
F
=225mA
V
R
=240V, T
A
=25 :
V
R
=240V, T
A
=150 :
and recovery to I
RR
=-3mA.
Test Conditions
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volts.
2. Measured at applied forward current of 30mA, reverse current of 30mA, R
L
=100
3. ESD sensitive product handling required.
GSMBD2004
Page: 1/2
GTM [ GTM CORPORATION ]
