ISSUED DATE :2004/12/13
REVISED DATE :
GSM BD4148
Description
S U R F A C E M O U N T, S W I T C H I N G D I O D E
V O LT A G E 7 5 V, C U R R E N T 0 . 2 A
The GSMBD4148 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the
silicon epitaxial planar process and packed in plastic surface mount package.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Maximum Peak Reverse Voltage
Maximum Reverse Voltage
Average Forward Current
Surge Current(1us)
Typical Junction Capacitance between Terminal (Note 1)
Maximum Reverse Recovery Time (Note2)
Total Power Dissipation
Symbol
Tj
Tstg
V
RM
V
R
I
O
I
FSM
C
J
T
RR
P
D
Ratings
+150
-65 ~ +150
100
75
200
2
4.0
4.0
225
V
V
mA
A
pF
nSec
mW
Unit
Electrical Characteristics at Ta = 25 :
Characteristic
Forward Voltage
Reverse Breakdown
Reverse Current
Symbol
VF
VR
IR
Min.
-
100
-
Max.
1
-
5
Unit
V
V
uA
IF=10mA
IR=100uA
VR=75V
ß .
Test Conditions
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volt.
2. Measured at applied forward current of 10mA, reverse current of 1.0mA, Reverse voltage of 6.0volt and RL=100
3. ESD sensitive product handling required.
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GTM [ GTM CORPORATION ]
