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GSMBT1623 参数 Datasheet PDF下载

GSMBT1623图片预览
型号: GSMBT1623
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 147 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GSMBT1623的Datasheet PDF文件第2页  
ISSUED DATE :2005/06/08
REVISED DATE :
GSM BT 1623
Description
Package Dimensions
NP N EP ITAXI AL P L ANAR T RANS ISTO R
The GSMBT1623 is designed for use driver stage of AF amplifier and general purpose application.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
60
50
5
150
250
V
V
V
mA
mW
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)1
*h
FE
1
*h
FE2
*h
FE3
fT
Cob
at Ta = 25 :
Min.
60
50
5
-
-
-
-
90
25
80
80
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
250
1.0
600
-
-
-
3.5
MHz
pF
Unit
V
V
V
nA
nA
mV
V
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=5V
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=1mA
VCE=6V, IC=150mA
VCE=1V, IC=10mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, f=1MHz, IE=0A
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Test Conditions
Classification Of h
FE
1
Rank
Range
L6P
90 - 180
L6Y
135 - 270
L6G
200 - 400
L6B
300 - 600
1/2