ISSUED DATE :2005/07/22
REVISED DATE :
GSM BT 4075
Description
NP N EP ITAXI AL P L ANAR T RANS ISTO R
The GSMBT4075 is designed for general purpose switching and amplifier applications.
Features
&
Excellent h
FE
Linearity : h
FE
(0.1mA)/ h
FE
(2mA)=0.95 (Typ.)
Package Dimensions
&High h
FE
: h
FE
= 70~700
&Complementary to GSMBT2014
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
Ratings
+150
-55~+150
60
50
5
150
30
225
Unit
V
V
V
mA
mA
mW
Electrical Characteristics (Ta = 25
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
fT
Cob
Min.
60
50
5
-
-
-
-
70
25
80
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
)
Max.
-
-
-
100
100
250
1
700
-
-
3.5
Unit
V
V
V
nA
nA
mV
V
Test Conditions
I
C
=100uA , I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA ,I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=2mA
V
CE
=6V, I
C
=150mA
V
CE
=10V, I
C
=1mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
LB
350 - 700
2%
MHz
pF
Classification Of h
FE1
Rank
Range
LO
70 - 140
LY
120 - 240
LG
200 - 400
1/2
GTM [ GTM CORPORATION ]
