CORPORATION
G SM BT 4 4 0 3
Description
Features
&
Complementary to GSMBT4401
Package Dimensions
The GSMBT4403 is designed for general purpose switching and amplifier applications.
ISSUED DATE :2004/12/20
REVISED DATE :
P NP EP ITAX I AL PL ANAR T RANSI STOR
& High DC Current Gain: 100-300 at 150mA
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25 :
Collector to Emitter Voltage at Ta=25 :
Emitter to Base Voltage at Ta=25 :
Collector Current at Ta=25 :
Total Power Dissipation at Ta=25 :
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
-40
-40
-5
-600
225
V
V
V
mA
mW
Unit
Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CE
X
*V
CE
(sat)1
*V
CE
(sat)2
*V
BE
(sat)1
*V
BE
(sat)2
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
*h
FE
5
fT
Cob
at Ta = 25 :
Min.
-40
-40
-5
-
-
-
-
-
30
60
100
100
20
200
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-400
-750
-950
-1.3
-
-
-
300
-
-
8.5
MHz
pF
Unit
V
V
V
nA
mV
mV
mV
V
I
C
=-100uA
I
C
=-1mA
I
E
=-10uA
V
CE
=-35V, V
BE
=-0.4V
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-1V, I
C
=-0.1mA
V
CE
=-1V, I
C
=-1mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-2V, I
C
=-150mA
V
CE
=-2V, I
C
=-500mA
V
CE
=-10V, I
C
=-20mA, f=100MHz
V
CE
=-10V, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Test Conditions
1/2
GTM [ GTM CORPORATION ]
