ISSUED DATE :2005/08/31
REVISED DATE :
GSM BT 5089
Description
Package Dimensions
NP N EP ITAXI AL P L ANAR T RANS ISTO R
The GSMBT5089 is designed for low noise, high gain and general purpose amplifier applications.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
Ratings
+150
-55~+150
30
25
4.5
50
225
Unit
V
V
V
mA
mW
Electrical Characteristics (Ta = 25
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
*h
FE
3
fT
Cob
Min.
30
25
4.5
-
-
-
-
400
450
400
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
)
Max.
-
-
-
50
100
500
800
1200
-
-
-
4.0
Unit
V
V
V
nA
nA
mV
mV
Test Conditions
I
C
=100uA , I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA ,I
C
=0
V
CB
=15V, I
E
=0
V
EB
=4.5V, I
C
=0
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=5V, I
C
=0.1mA
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=0.5mA, f=20MHz
V
CB
=5V, I
E
=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
MHz
pF
1/2
GTM [ GTM CORPORATION ]
