ISSUED DATE :2005/08/31
REVISED DATE :
GSM BT 5551
Description
NP N EP ITAXI AL P L ANAR T RANS ISTO R
The GSMBT5551 is designed for general purpose applications requiring high breakdown voltage.
Features
&
Collector-Emitter Breakdown Voltage (BV
CEO
=160V @ IC=1mA)
High
Package Dimensions
&Complementary to GSMBT5401
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
Ratings
+150
-55~+150
180
160
6
600
225
Unit
V
V
V
mA
mW
Electrical Characteristics (Ta = 25
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
1
*V
BE(sat)
2
*h
FE
1
*h
FE
2
*h
FE
3
fT
Cob
Min.
180
160
6
-
-
-
-
-
-
80
80
30
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
)
Max.
-
-
-
50
50
150
200
1
1
-
250
-
300
6
Unit
V
V
V
nA
nA
mV
mV
V
V
Test Conditions
I
C
=100uA , I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA ,I
C
=0
V
CB
=120V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
V
CE
=10V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
MHz
pF
GSMBT5551
Page: 1/2
GTM [ GTM CORPORATION ]
