ISSUED DATE :2005/08/31
REVISED DATE :
GSM BT 8050
Description
Package Dimensions
NP N E PITAXI AL T RANSI STOR
The GSMBT8050 is designed for general purpose amplifier applications.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
,unless otherwise noted)
Max.
-
-
-
1
100
500
1
500
-
10
MHz
pF
Unit
V
V
V
uA
nA
mV
V
I
C
=10uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=150mA
V
CE
=1V, I
C
=150mA
V
CE
=10V, I
C
=20mA, f=100MHz
V
CB
=10V, f=1MHz
Test Conditions
Ratings
+150
-55~+150
25
20
5
700
225
Unit
V
V
V
mA
mW
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
fT
Cob
Min.
25
20
5
-
-
-
-
120
150
-
Typ.
-
-
-
-
-
-
-
-
-
-
Classification Of h
FE
Rank
Range
D9C
120 ~ 200
D9D
150 ~ 300
D9E
250 ~ 500
GSMBT8050
Page: 1/2
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