ISSUED DATE :2005/08/31
REVISED DATE :
GSM BT 8550
Description
Package Dimensions
P NP E PITAXI AL T RANSI STOR
The GSMBT8550 is designed for general purpose amplifier applications.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
,unless otherwise noted)
Max.
-
-
-
-1
-100
-500
-1
500
-
10
MHz
pF
Unit
V
V
V
uA
nA
mV
V
I
C
=-10uA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10uA, I
C
=0
V
CB
=-20V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-500mA, I
B
=-50mA
V
CE
=-1V, I
C
=-150mA
V
CE
=-1V, I
C
=-150mA
V
CE
=-10V, I
C
=-20mA, f=100MHz
V
CB
=-10V, f=1MHz
Test Conditions
Ratings
+150
-55~+150
-25
-20
-5
-700
225
Unit
V
V
V
mA
mW
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
fT
Cob
Min.
-25
-20
-5
-
-
-
-
100
150
-
Typ.
-
-
-
-
-
-
-
-
-
-
Classification Of h
FE
Rank
Range
B9C
100 ~ 200
B9D
150 ~ 300
B9E
250 ~ 500
GSMBT8550
Page: 1/2
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