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GSMBT9013 参数 Datasheet PDF下载

GSMBT9013图片预览
型号: GSMBT9013
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延型晶体管 [NPN EPITAXIAL TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 174 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GSMBT9013的Datasheet PDF文件第2页  
ISSUED DATE :2004/12/20
REVISED DATE :
GSM BT 9013
Description
Package Dimensions
NPN E PITAX I AL T RANSI STOR
The GSMBT9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
40
20
5
500
225
V
V
V
mA
mW
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*h
FE
1
*h
FE
2
fT
Cob
at Ta = 25 :
Min.
40
20
5
-
-
-
-
-
112
40
100
-
Typ.
-
-
-
-
-
-
-
-
180
-
-
-
Max.
-
-
-
100
100
0.6
1.2
0.9
300
-
-
8
MHz
pF
Unit
V
V
V
nA
nA
V
V
V
IC=100uA , IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=25V, IE=0
VEB=3V, IC=0
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=500mA
VCE=1V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Test Conditions
Classification Of h
FE
1
Rank
Range
3BG
112 - 166
3BH
144 - 202
3BL
176 - 300
1/2