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GSMBT9014 参数 Datasheet PDF下载

GSMBT9014图片预览
型号: GSMBT9014
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延型晶体管 [NPN EPITAXIAL TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 195 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GSMBT9014的Datasheet PDF文件第2页浏览型号GSMBT9014的Datasheet PDF文件第3页  
ISSUED DATE :2004/12/20
REVISED DATE :
GSM BT 9014
Description
Package Dimensions
NPN E PITAX I AL T RANSI STOR
The GSMBT9014 is designed for general purpose amplifier applications.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
50
45
5
100
225
V
V
V
mA
mW
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*h
FE
fT
Cob
at Ta = 25 :
Min.
50
45
5
-
-
-
-
0.58
100
150
-
Typ.
-
-
-
-
-
0.14
0.84
0.63
280
270
2.20
Max.
-
-
-
50
50
0.3
1
0.7
1000
-
3.5
MHz
pF
Unit
V
V
V
nA
nA
V
V
V
IC=100uA , IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz, IE=0
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Test Conditions
Classification Of h
FE
Rank
Range
3CB
100 - 300
3CC
200 - 600
3CD
400 - 1000
1/3