ISSUED DATE :2005/08/31
REVISED DATE :
G S M B TA 4 2
Description
Package Dimensions
NP N EP ITAX I AL PL ANAR T RANSI STOR
The GSMBTA42 is designed for high voltage transistor.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
,unless otherwise noted)
Max.
Unit
-
-
-
100
100
500
900
-
-
-
-
3
MHz
pF
V
V
V
nA
nA
mV
mV
I
C
=100uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100uA, I
C
=0
V
CB
=200V, I
E
=0
V
EB
=6V, I
C
=0
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
V
CE
=20V, I
C
=10mA, f=100MHz
V
CB
=20V, I
E
=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Ratings
+150
-55~+150
300
300
6
500
350
Unit
V
V
V
mA
mW
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
*h
FE
3
fT
Cob
Min.
300
300
6
-
-
-
-
25
40
40
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Test Conditions
GSMBTA42
Page: 1/2
GTM [ GTM CORPORATION ]
