ISSUED DATE :2005/08/31
REVISED DATE :
G S M B TA 6 4
Description
Features
&
D.C. Current Gain
High
PNP SILICON TRANSISTOR
The GSMBTA64 is designed for application requiring extremely high current gain at collector to 500mA.
&Complementary to GSMBTA14
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
,unless otherwise noted)
Max.
-
-
-
-100
-100
-1.5
-2
-
-
-
MHz
Unit
V
V
V
nA
nA
V
V
I
C
=-100uA, I
E
=0
I
C
=-100uA, I
B
=0
I
E
=-10uA, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-10V, I
C
=0
I
C
=-100mA, I
B
=-0.1mA
V
CE
=-5V, I
C
=-100mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-100mA
V
CE
=-5V, I
C
=-100mA, f=100MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Ratings
+150
-55~+150
-30
-30
-10
-500
225
Unit
V
V
V
mA
mW
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
fT
Min.
-30
-30
-10
-
-
-
-
10K
20K
125
Typ.
-
-
-
-
-
-
-
-
-
-
Test Conditions
GSMBTA56
Page: 1/2
GTM [ GTM CORPORATION ]
