ISSUED DATE :2005/10/31
REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol
BV
DSS
BV
DSS
/
Tj
Min.
20
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.037
-
18.5
-
-
-
-
-
9
1.8
4.2
6.5
14
20
15
300
255
115
Max.
-
-
1.2
-
±100
1
25
35
50
-
-
-
-
-
-
-
-
-
-
Unit
V
V/ :
V
S
nA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=6A
V
GS
= ±12V
V
DS
=20V, V
GS
=0
V
DS
=16V, V
GS
=0
V
GS
=4.5V, I
D
=6A
V
GS
=2.5V, I
D
=5.2A
I
D
=6A
V
DS
=10V
V
GS
=4.5V
V
DS
=10V
I
D
=1A
V
GS
=4.5V
R
G
=6
R
D
=10
V
GS
=0V
V
DS
=8V
f=1.0MHz
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
2
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
2
Continuous Source Current (
Body Diode
)
Symbol
V
SD
I
S
Min.
-
-
Typ.
-
-
Max.
1.2
1.67
Unit
V
A
Test Conditions
I
S
=1.7A, V
GS
=0V, Tj=25 :
V
D
=V
G
=0V, V
S
=1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 135 : /W when mounted on Min. copper pad.
GSS4924
Page: 2/5
GTM [ GTM CORPORATION ]
