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GSS9926 参数 Datasheet PDF下载

GSS9926图片预览
型号: GSS9926
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 306 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GSS9926的Datasheet PDF文件第2页浏览型号GSS9926的Datasheet PDF文件第3页浏览型号GSS9926的Datasheet PDF文件第4页  
Pb Free Plating Product
ISSUED DATE :2004/05/27
REVISED DATE :2006/11/15E
GSS9926
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
20V
28m
6A
Description
The GSS9926 provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
*Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
Features
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
4.80
3.80
0.40
0.19
6.20
5.00
4.00
0.90
0.25
REF.
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current , V
GS
@4.5V
Continuous Drain Current
3
, V
GS
@4.5V
Pulsed Drain Current
1
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
Symbol
V
DS
V
GS
I
D
@Ta=25 :
I
D
@Ta=70 :
I
DM
P
D
@Ta=25 :
Tj, Tstg
Ratings
20
±8
6
4.8
20
2
0.016
-55 ~ +150
Unit
V
V
A
A
A
W
W/ :
:
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Symbol
Rthj-a
Value
62.5
Unit
:
/W
GSS9926
Page: 1/4