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GSS9930 参数 Datasheet PDF下载

GSS9930图片预览
型号: GSS9930
PDF下载: 下载PDF文件 查看货源
内容描述: N和P沟道增强型功率MOSFET [N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 7 页 / 399 K
品牌: GTM [ GTM CORPORATION ]
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Pb Free Plating Product
ISSUED DATE :2005/10/13
REVISED DATE :
GSS9930
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
The GSS9930 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
*Simple Drive Requirement
*Low On-resistance
*Fast Switching
Description
N-CH BV
DSS
30V
N-CH
R
DS(ON)
33m
N-CH
I
D
6.3A
P-CH BV
DSS
-30V
N-CH
R
DS(ON)
55m
N-CH
I
D
-5.1A
Features
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
4.80
3.80
0.40
0.19
6.20
5.00
4.00
0.90
0.25
REF.
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Ratings
N-channel P-channel
Unit
V
V
A
A
A
W
W/ :
:
30
±25
6.3
4.2
20
2.0
0.016
-30
±25
-5.1
-3.4
-20
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Rthj-a
Value
62.5
Unit
: /W
GSS9930
Page: 1/7