Pb Free Plating Product
ISSUED DATE :2005/03/02
REVISED DATE :2005/09/29B
GSS9960
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
40V
20m
7.8A
The GSS9960 provide the designer with the best combination of fast switching, ruggedized device design, ultra
low on-resistance and cost-effectiveness.
*Low On-Resistance
*Fast Switching Speed
Description
Features
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
4.80
3.80
0C
0.40
0.19
6.20
5.00
4.00
8C
0.90
0.25
REF.
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45 C
1.27 TYP.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Ratings
40
f 20
7.8
6.2
20
2
0.016
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Continuous Drain Current
3
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Rthj-amb
Value
62.5
Unit
/W
GSS9960
Page: 1/5
GTM [ GTM CORPORATION ]
