Pb Free Plating Product
ISSUED DATE :2005/04/06
REVISED DATE :2005/09/29B
GSS9973
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
60V
80m
3.9A
The GSS9973 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
*Simple Drive Requirement
*Low Gate Charge
Description
Features
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
4.80
3.80
0C
0.40
0.19
6.20
5.00
4.00
8C
0.90
0.25
REF.
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45 C
1.27 TYP.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@10V
Continuous Drain Current
3
, V
GS
@10V
Pulsed Drain Current
1,2
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Ratings
60
f 20
3.9
2.5
20
2
0.016
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Symbol
Rthj-a
Value
62.5
Unit
/W
GSS9973
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