Pb Free Plating Product
ISSUED DATE :2006/01/16
REVISED DATE :
GT2622
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
50V
1.8
520mA
The GT2622 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial applications.
Description
*Low Gate Charge
*Surface Mount package
*RoHS Compliant
Features
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.60
1.40
0.30
0
0°
Max.
3.10
3.00
1.80
0.55
0.10
10°
REF.
G
H
I
J
K
L
Dimensions
Millimeter
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@10V
3
Continuous Drain Current , V
GS
@10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Ratings
50
±20
520
410
1.5
0.8
0.006
-55 ~ +150
Value
150
Unit
V
V
mA
mA
A
W
W/ :
:
Unit
:
/W
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
1/4
GTM [ GTM CORPORATION ]
