Pb Free Plating Product
ISSUED DATE :2005/05/18
REVISED DATE :
GT2625
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-30V
135m
-2.3A
The GT2625 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The GT2625 is universally used for all commercial-industrial applications.
Description
*Low Gate Charge
*Low On-resistance
Features
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.60
1.40
0.30
0
0°
Max.
3.10
3.00
1.80
0.55
0.10
10°
REF.
G
H
I
J
K
L
Dimensions
Millimeter
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Ratings
-30
f 12
-2.3
-2.0
-20
1.2
0.01
-55 ~ +150
Ratings
110
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Unit
/W
1/4
GTM [ GTM CORPORATION ]
