Pb Free Plating Product
ISSUED DATE :2005/10/26
REVISED DATE :2007/01/25B
GTS9922E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
20V
15m
6.8A
The GTS9922E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
*Low on-resistance
*Capable of 2.5V gate drive
*Optimal DC/DC battery application
*Surface mount package
Description
Features
Package Dimensions
REF.
A
A1
b
c
D
Millimeter
Min.
-
0.05
0.19
0.09
2.90
Max.
1.20
0.15
0.30
0.20
3.10
REF.
E
E1
e
L
S
Millimeter
Min.
6.20
4.30
0.45
0°
Max.
6.60
4.50
0.75
8°
0.65 BSC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current , V
GS
@4.5V
Continuous Drain Current , V
GS
@4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
3
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Ratings
20
±12
6.8
5.4
25
1
0.008
-55 ~ +150
Unit
V
V
A
A
A
W
W/ :
:
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Rthj-a
Value
125
Unit
: /W
GTS9922E
Page: 1/4
GTM [ GTM CORPORATION ]
