Pb Free Plating Product
ISSUED DATE :2006/03/28
REVISED DATE :
GTT2623
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-30V
170m
-2.0A
The GTT2623 utilized advanced processing techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The GTT2623 is universally used for all commercial-industrial applications.
Description
*Low Gate Charge
*Low On-resistance
Features
Package Dimensions
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min.
Max.
1.10 MAX.
0
0.10
0.70
1.00
0.12 REF.
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min.
Max.
0.45 REF.
0.60 REF.
0°
10°
0.30
0.50
0.95 REF.
1.90 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Operating Junction and Storage Temperature Range
Ratings
-30
±20
-2
-1.6
-20
1.2
0.01
-55 ~ +150
Value
110
Unit
V
V
A
A
A
W
W/ :
:
Unit
/W
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
1/4
GTM [ GTM CORPORATION ]
