Pb Free Plating Product
ISSUED DATE :2006/02/23
REVISED DATE :
GTT3585
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
N-CH BV
DSS
20V
N-CH
R
DS(ON)
75m
N-CH
I
D
3.5A
P-CH BV
DSS
-20V
N-CH
R
DS(ON)
160m
N-CH
I
D
-2.5A
The GTT3585 provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The TSSOP-6 package is universally used for all commercial-industrial surface mount applications.
Features
*Low Gate Change
*Low On-resistance
*RoHS Compliant
Package Dimensions
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min.
Max.
1.10 MAX.
0
0.10
0.70
1.00
0.12 REF.
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min.
Max.
0.45 REF.
0.60 REF.
0°
10°
0.30
0.50
0.95 REF.
1.90 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Ratings
N-channel P-channel
Unit
V
V
A
A
A
W
W/ :
:
20
± 12
3.5
2.8
10
1.14
0.01
-20
± 12
-2.5
-1.97
-10
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Symbol
Rthj-a
Value
110
Unit
: /W
GTT3585
Page: 1/7
GTM [ GTM CORPORATION ]
