Pb Free Plating Product
ISSUED DATE :2006/08/08
REVISED DATE :
GTT8209E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
20V
21m
7A
The GTT8209E used advanced trench technology to provide excellent on-resistance extremely efficient and
cost-effectiveness device.
The GTT8209E is universally used for all commercial-industrial applications.
Description
* Lower Gate Charge
*Small Package Outline
*RoHS Compliant
Features
Package Dimensions
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min.
Max.
1.10 MAX.
0
0.10
0.70
1.00
0.12 REF.
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min.
Max.
0.45 REF.
0.60 REF.
0°
10°
0.30
0.50
0.95 REF.
1.90 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
1,2
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Operating Junction and Storage Temperature Range
Ratings
20
±12
7
5.7
30
1.2
0.01
-55 ~ +150
Value
110
Unit
V
V
A
A
A
W
W/ :
:
Unit
:
/W
Thermal Data
Parameter
3
Thermal Resistance Junction-ambient
Max.
GTT8209E
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GTM [ GTM CORPORATION ]
