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GU60N03 参数 Datasheet PDF下载

GU60N03图片预览
型号: GU60N03
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 5 页 / 284 K
品牌: GTM [ GTM CORPORATION ]
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Pb Free Plating Product
ISSUED DATE :2005/01/25
REVISED DATE :2005/10/19B
GU60N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
16.5m
55A
The GU60N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage application such as DC/DC converters and high efficiency switching circuit.
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Description
Features
Package Dimensions
REF.
A
b
L4
c
L3
L1
E
Millimeter
REF.
Min.
Max.
4.40
4.80
c2
0.76
1.00
b2
0.00
0.30 B D
0.36
0.5
e
1.50 REF.
L
2.29
2.79
9.80
10.4
L2
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
8.6
9.0
2.54 REF.
14.6
15.8
1.27 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@10V
Continuous Drain Current, V
GS
@10V
Pulsed Drain Current
1
Symbol
V
DS
V
GS
I
D
@T
C
=25 :
I
D
@T
C
=100 :
I
DM
P
D
@T
C
=25 :
Tj, Tstg
Ratings
30
±20
55
35
215
62.5
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/ :
:
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
2.0
62
Unit
:
/W
: /W
GU60N03
Page: 1/5